A Model of Forming the Surface Layer of Ceramic Parts Based on Silicon Nitride in the Grinding Process

V Kuzin

doi:10.4028/www.scientific.net/KEM.496.127

Paper Titles

Investigation of Thermally Treated Recyled Glass as a Vibratory Mass Finishing Media
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Experimental Evaluation of Grinding Mechanism in Micro Depth of Cut
p.110

Thermodynamics of Precision Diamond Lapping of Ceramic Surfaces
p.115

Bearing Surfaces with Sapphire for Total Hip-Joint Replacement
p.121

A Model of Forming the Surface Layer of Ceramic Parts Based on Silicon Nitride in the Grinding Process
p.127

New Ways in Aluminium Alloys Grinding
p.132

Turning of Inconel 718 by Cemented Carbides
p.138

Pulsed Processes when Cutting Heat-Resistant Alloys
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Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study
p.150

HomeKey Engineering MaterialsKey Engineering Materials Vol. 496A Model of Forming the Surface Layer of Ceramic...

A Model of Forming the Surface Layer of Ceramic Parts Based on Silicon Nitride in the Grinding Process

Abstract:

The results of the study of the influence of the grinding regimes and the characteristics of the diamond tool on the strength and the surface layer of the ceramic parts based on silicon nitride are presented in this article. The revealed regularities of the surface layer and defect formation have been used to develop a model of the forming of the surface layer of the ceramic parts. The proposed model will increase operational resource resistance of the ceramic parts by 10–25%.

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Periodical:

Key Engineering Materials (Volume 496)

Pages:

127-131

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.496.127

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Online since:

December 2011

Authors:

V Kuzin

Keywords:

Ceramic Part, Grinding Process, Silicon Nitride, Surface Layer

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References

[1] Djuravleva N.V., Lukin E.S. Ceramics on the base of Si3N4. Refractory materials. 1993. №1. PP. 6-11.

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[2] Kuzin V. Technology for machining high-refractory ceramic parts based on silicon nitride / Refractories and Industrial Ceramics. Vol. 47, No. 4, P. 204-208.

DOI: 10.1007/s11148-006-0089-7

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