Formation of 12-nm Nanodot Pattern by Block Copolymer Self-Assembly Technique

Miftakhul Huda; Takuro Tamura; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.497.122

Paper Titles

Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory
p.101

Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories
p.106

Random-Access Multilevel Storage in Phase Change Memory by Staircase-Like Pulse Programming
p.111

Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Treatment
p.116

Formation of 12-nm Nanodot Pattern by Block Copolymer Self-Assembly Technique
p.122

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation
p.127

Tunable Fiber Laser with Scanner Mirror
p.135

Optically Controlled Light Propagation in Dye-Doped Nematic Liquid Crystals with Homogeneous Alignment
p.142

Fabrication of Polymer Optical Waveguides for the 1.5-μm Band Using Focused Proton Beam
p.147

HomeKey Engineering MaterialsKey Engineering Materials Vol. 497Formation of 12-nm Nanodot Pattern by Block...

Formation of 12-nm Nanodot Pattern by Block Copolymer Self-Assembly Technique

Abstract:

In this work, we studied the fabrication of 12-nm-size nanodot pattern by self-assembly technique using high-etching-selectivity poly (styrene)-poly (dimethyl-siloxane) (PS-PDMS) block copolymers. The necessary etching duration for removing the very thin top PDMS layer is unexpectedly longer when the used molecular weight of PS-PDMS is 13.5-4.0 kg/mol (17.5 kg/mol total molecular weight) than that of 30.0-7.5 kg/mol (37.5 kg/mol total molecular weight). From this experimental result, it was clear that PS-PDMS with lower molecular weight forms thicker PDMS layer on the air/polymer interface of PS-PDMS film after microphase separation process. The 22-nm pitch of nanodot pattern by self-assembly holds the promise for the low-cost and high-throughput fabrication of 1.3 Tbit/inch² storage device. Nanodot size of 12 nm also further enhances the quantum-dot effect in quantum-dot solar cell.