A Monolithic Integrated Pressure Sensor

Zheng Yuan Zhang; Cao Yang; Yong Mei; Zhi Cheng Feng; Xiao Gang Li; Jian Gen Li; Guo Xiang Hu

doi:10.4028/www.scientific.net/KEM.503.8

Paper Titles

Preface

The Out-Rotator of Spin Traveling Wave Pump on Magnetic Fluid
p.3

A Monolithic Integrated Pressure Sensor
p.8

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope
p.12

Pull-In Voltage of Parallel-Plate Capacitor Fixed to Double Elastic Supports
p.18

Research on Two-Dimensional Scanning Characteristics of MEMS Resonant Mirror
p.24

Design and Fabrication of a MEMS Flexural Plate Wave Device Based on LTO/ZnO/LTO/Si₃N₄ Multilayered Composite Membrane
p.29

New Isolation Optimization Method of RF MEMS Capacitive Switches
p.35

Design, Fabrication and Characterization of a 5x5 Array of Piezoresistive Stress and Temperature Sensors
p.43

HomeKey Engineering MaterialsKey Engineering Materials Vol. 503A Monolithic Integrated Pressure Sensor

A Monolithic Integrated Pressure Sensor

Abstract:

pressure sensor, CrSi resistor networks, temperature compensation. Abstract. In this paper, focused on especial requirement monolithic integrated resistance pressure sensor, pressure structure, signal processing circuits and process compatible technology of sensor and IC were studied. The feebleness pressure signal monitoring circuits was designed, high precision CrSi resistor networks was used for temperature compensation of resistance pressure sensor, and a monolithic integrated pressure sensor only 2.3×2.3mm2 was obtained. The measuring results are as follows, measurement range is 5-115kPa, the maximum Vout is more than 4.5V, sensitivity is 1.2%.

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Periodical:

Key Engineering Materials (Volume 503)

Pages:

8-11

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.503.8

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Online since:

February 2012

Authors:

Zheng Yuan Zhang, Cao Yang, Yong Mei, Zhi Cheng Feng, Xiao Gang Li, Jian Gen Li, Guo Xiang Hu

Keywords:

CrSi Resistor Networks, Pressure Sensor, Temperature Compensation

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References

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