Deposition of BaTi2O5 Films on Si Substrates by Using MgO Buffers

L. Li; Chuan Bin Wang; Qiang Shen; Lian Meng Zhang

doi:10.4028/www.scientific.net/KEM.508.189

Paper Titles

Microstructural Change of β′ Phase and Hardness Change in As-Solutionized Dental Ag-20Pd-12Au-14.5Cu Alloy
p.166

Effect of Microalloying Elements on Solidification Microstructure of the La(Fe₀_.₈₉Si₀_.11)₁₃ Alloy
p.172

Study on Microstructure and Property of Diffusion-Bonded Mo-Cu Joints
p.178

Growth of b-Axis-Oriented BaTi₂O₅ Nanopillars by Laser Chemical Vapor Deposition
p.185

Deposition of BaTi₂O₅ Films on Si Substrates by Using MgO Buffers
p.189

Effect of Nitridation on Indium-Composition of InGaN Films
p.193

Ba₂TiO₄ and Ba₄Ti₁₃O₃₀ Thick Films Prepared by Laser Chemical Vapor Deposition and their Microstructure
p.199

Search for New Superconductors by Soft-Chemical Techniques
p.203

Preparation of c-Axis-Oriented Y₂Ba₄Cu₇O₁₅_-δ Films by Laser CVD with Ultrasonically Nebulized Precursor
p.207

HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Deposition of BaTi2O5 Films on Si Substrates by...

Deposition of BaTi₂O₅ Films on Si Substrates by Using MgO Buffers

Abstract:

Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi₂O₅ Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (P_O2). the Effects of P_O2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at P_O2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing P_O2. at P_O2 = 10 Pa, the BaTi₂O₅ Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi₂O₅ Films on Si Substrates.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 508)

Pages:

189-192

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.189

Citation:

Cite this paper

Online since:

March 2012

Authors:

L. Li, Chuan Bin Wang, Qiang Shen, Lian Meng Zhang

Keywords:

BaTi₂O₅ Film, b-Axis Orientation, MgO Buffers, Pulsed Laser Deposition (PLD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Akashi, H. Iwata, T. Goto, Dielectric property of single crystalline BaTi2O5 prepared by a floating zone method, Mater. Trans. 44 (2003) 1644-1646.

DOI: 10.2320/matertrans.44.1644

Google Scholar

[2] Y. Aakishige, K. Fukano, H. Shigematsu, Crystal growth and dielectric properties of new ferroelectric barium titanate: BaTi2O5, J. Electroceram. 13 (2004) 561-565.

DOI: 10.1007/s10832-004-5158-z

Google Scholar

[3] R. Tu, T. Goto, Dielectric Properties of poly- and single-crystalline BaTi2O5, Mater. Trans. 47 (2006) 2898-2903.

Google Scholar

[4] J.F. Scott, C.A. Araujo, Ferroelectric memories, Science 246 (1989) 1400-1405.

Google Scholar

[5] C.B. Wang, R. Tu, T. Goto, Structural and optical properties of BaTi2O5 thin films prepared by pulsed laser deposition at different substrate temperatures, Mater. Chem. Phys. 113 (2009) 130-134.

DOI: 10.1016/j.matchemphys.2008.07.048

Google Scholar

[6] C.B. Wang, R. Tu, T. Goto, Ferroelectric BaTi2O5 thin film prepared by laser ablation, J. Vac. Sci. Technol. A 25 (2007) 304-307.

DOI: 10.1116/1.2539219

Google Scholar

[7] L. Li, C.B. Wang, F. Wang, Preparation of MgO films as buffer layers by laser ablation at various substrate temperatures, J. Wuhan Univ. Technol. 26 (2011) 888-890.

DOI: 10.1007/s11595-011-0331-0

Google Scholar

[8] R. Tu, T. Kimura, T. Goto, High-speed deposition of yttria stabilized zirconia by MOCVD, Surf. Coat. Technol. 187 (2004) 238-244.

DOI: 10.1016/j.surfcoat.2004.02.016

Google Scholar

[9] G. Wahl, C. Metz, S. Samoilenkov, Thermal barrier coatings, J. Phys. IV France 11 (2001) 835-846.

DOI: 10.1051/jp4:20013105

Google Scholar

[10] T. Kimura, T. Goto, H. Yamane, A ferroelectric barium titanate, BaTi2O5, Acta Cryst. C59 (2003) i128- i130.

Google Scholar