B2O3-Doped ZnO-Pr6O11 Based Varistor Ceramics

Yue Ping Wang; Zhi Jian Peng; Hai Feng; Cheng Biao Wang; Zhi Qiang Fu; Long Hao Qi; He Zhuo Miao

doi:10.4028/www.scientific.net/KEM.512-515.1277

Paper Titles

Study on Electronic Properties of ZnO Doped with Cr, Mn and Co by First Principles
p.1257

La Doped Layered Structure Low-Voltage ZnO Varistor
p.1263

Solid-State Reaction and Gas Sensor Properties of Porous SnO₂-In₂O₃ Composites
p.1268

Donor Solid Solubility and Microstructure of Nb-Doped TiO₂ Ceramic Varistor
p.1273

B₂O₃-Doped ZnO-Pr₆O₁₁ Based Varistor Ceramics
p.1277

Fabrication and Electrical Properties of Vanadium Pentoxide Fibres
p.1281

Failure Behavior of PZT 95/5 under Direct Current, Pulsed Electric Field and Shock Compression
p.1286

Synthesis and Electrical Properties of PZT/BaFe₁₂O₁₉ Multiferroic Ceramics
p.1291

Design of the PTO/PZO Ferroelectric Superlattice Assembly
p.1296

HomeKey Engineering MaterialsKey Engineering Materials Vols. 512-515B2O3-Doped ZnO-Pr6O11 Based Varistor Ceramics

B₂O₃-Doped ZnO-Pr₆O₁₁ Based Varistor Ceramics

Abstract:

B2O3-doped ZnO-Pr6O11 based varistor ceramics were fabricated by sintering samples at 1350 °Cfor 2h with conventional ceramic processing method. The microstructure and electrical properties of the as-prepared samples were investigated. X-ray diffraction analysis showed that after the addition of B2O3 with the amount designed in this study, no new phase was examined in the detection limit. Through scanning electron microscopy it was found that the doping of B2O3 can promote the growth of ZnO grains, and the sintering of the samples. The result of electrical properties indicated that the nonlinear coefficient and varistor voltage of the samples could be improved to some extent with appropriate doping amount of B2O3, resulting in the highest nonlinear coefficient 6.7, lowest leakage current 329 μA/cm2, and highest varistor voltage 92.4 V/mm, respectively.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 512-515)

Pages:

1277-1280

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.512-515.1277

Citation:

Cite this paper

Online since:

June 2012

Authors:

Yue Ping Wang, Zhi Jian Peng, Hai Feng, Cheng Biao Wang, Zhi Qiang Fu, Long Hao Qi, He Zhuo Miao

Keywords:

B₂O₃ Doping, Electrical Properties, Pr₆O₁₁, ZnO Varistor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T.K. Gupta, Application of zinc oxide varistor, J. Am. Ceram. Soc. 73(1990) 1817-1840.

Google Scholar

[2] L.M. Levinson, H.R. Philipp, Znic-oxide varistor-A review, J. Am. Ceram. Soc. 64(1985) 639-646.

Google Scholar

[3] C.W. Nahm, Nonlinear properties and stability against DC accelerated aging stress of praseodymium oxide-based ZnO varistors by Er2O3 doping, Solid State Commun. 126 (2003) 281-284.

DOI: 10.1016/s0038-1098(03)00062-0

Google Scholar

[4] H. Feng, Z.J. Peng, X.L. Fu, et al, Effect of SnO2 doping on microstructural and electrical properties of ZnO-Pr6O11 based varistor ceramics, J. Alloys Compd. 509 (2011) 7175-7180.

DOI: 10.1016/j.jallcom.2011.04.042

Google Scholar

[5] F.H. Liu, G.J. Xu, L. Duan, et al, Influence of B2O3 additives on microstructual and electrical properties of ZnO-Bi2O3-Sb2O3-based varistors, J. Alloys Compd. 509 (2011) 56-58.

DOI: 10.1016/j.jallcom.2010.10.074

Google Scholar