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Electrical Characteristics and Microstructures of Pr6O11-Doped Bi4Ti3O12 Ceramics

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Abstract:

The electrical properties of Pr6O11-doped bismuth titanates (BixPryTi3O12, BPT) ceramics prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Pr-doped samples exhibit negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Pr-doped bismuth titanates. The impedance spectrum indicates that Pr-doped sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Pr-doped samples exhibit randomly oriented and plate-like morphology.

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Periodical:

Key Engineering Materials (Volumes 512-515)

Pages:

1313-1316

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.512-515.1313

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Online since:

June 2012

Authors:

Min Chen, X.A. Mei, R.F. Liu, Chong Qing Huang, J. Liu

Keywords:

Bismuth Titanate, Electrical Properties, Impedance, Microstructure

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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