Electrical Properties and Microstructures of Tb₄O₇-Doped Bi₄Ti₃O₁₂ Ceramics

Abstract:

The electrical properties of Tb₄O₇-bismuth titanate (Bi_3.3Tb_0.6Ti₃O₁₂) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Tb-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Tb-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi₄Ti₃O₁₂ and the distribution of every element is uniform. Tb-doped sample exhibit randomly oriented and plate-like morphology.

• Periodical: Key Engineering Materials (Volumes 512-515)
• Pages: 1329-1332
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.512-515.1329
• Online since: June 2012
• Authors: X.A. Mei, M. Chen, R.F. Liu, Chong Qing Huang, J. Liu
• Keywords: Bismuth Titanate, Electrical Properties, Impedance, Microstructure

References

[1] U. Chon, K. Kim, H. M Jang, et al. Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations, Appl. Phys. Lett. 79 (2001) 3137-3139.

DOI: 10.1063/1.1415353

[2] D. Wu, A. D. Li, T. Yu, et al. Polarization and electrical properties of Bi3.25Pr0.75Ti3O12 ferroelectric thin films, Appl. Phys. Lett. 78 (2004) 95-99.

[3] J. F. Scott, C. A. P. De Araujo, Ferroelectric memories, Science, 246 (1998) 1400-1402.

[4] C. A. P. De Araujo, J. D. Cuchiare, L. D. McMillan, et al. Fatigue-free ferroelectric capacitors, Nature, 374 (1995) 627-629.

DOI: 10.1038/374627a0

[5] T. Kojima, T. Sakai, T. Watanabe, et al. Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 80 (2002) 2746-2748.

DOI: 10.1063/1.1468914

[6] H. Matsuda, S. Ito, T. Iijima, Orientation behavior and ferro-piezoelectric properties of Bi4-xPrxTi3O12 polycrystalline films, Jpn. J. Appl. Phys. 42 (2003) 5977-5980.

DOI: 10.1143/jjap.42.5977

[7] W. Wang, J. Zhu, X. Y. Mao, et al. Properties of Tunsten-doped Bi4Ti3O12-Sr Bi4Ti4O15 intergrouth ferroelectrics, Mater. Res. Bull. 42 (2007) 274-280.

[8] H. S. Gu, A. X. Kuang, S. M. Wang, et al. Synthesis and ferroelectric properties of c-axies oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon, Appl. Phys. Lett. 68 (1996) 1209-1210.

DOI: 10.1063/1.115971

[9] B. H. Park, B. S. Kang, S. D. Bu, et al. Fatigue-free ferroelectric capacitors, Nature, 401(1999) 682-685.

[10] D. Wu, D. Li, N. B. Ming, Dielectric characterization of Bi3.25La0.75Ti3O12 thin films, Appl. Phys. Lett. 84 (2004) 4505-4507.

DOI: 10.1063/1.1757631

[11] A. Z. Simoes, C. Quinelato, A. Ries, et al. Preparation of Lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method, Mater. Chemistry and Phys. 98 (2006) 481-485.

DOI: 10.1016/j.matchemphys.2005.09.070

[12] C. Min, K. L. Huang, X. A. Mei, et al. Electical Characteristics and Microstructures of Pr6O11-doped Bi4Ti3O12 thin films, Transactions of Nonferrous Metals Society of China, 19 (2009) 138-142.

DOI: 10.1016/s1003-6326(08)60241-1