Ferroelectric Properties of Bismuth Titanate Ceramics by Sm3+/V5+ Substitution

Chong Qing Huang; Min Chen; R.F. Liu; X.A. Mei; J. Liu

doi:10.4028/www.scientific.net/KEM.512-515.1333

Paper Titles

Electrical and Physical Properties of the Bi_3.25La_0.75Ti₃O₁₂ Ferroelectric Thin Films Prepared by Conventional Temperature Annealing Process
p.1317

Ferroelectric and Physical Characteristic of the La and V Doped on Bi₄Ti₃O₁₂ Thin Film Prepared by RF Magnetron Sputtering Method
p.1321

Ferroelectric Properties and Microstructures of Tb₄O₇-Doped Bi₄Ti₃O₁₂ Thin Films
p.1325

Electrical Properties and Microstructures of Tb₄O₇-Doped Bi₄Ti₃O₁₂ Ceramics
p.1329

Ferroelectric Properties of Bismuth Titanate Ceramics by Sm³⁺/V⁵⁺ Substitution
p.1333

Piezoceramic Stack Actuators for Micropositioning Stage
p.1337

Damping Properties of Epoxy-Embedded Piezoelectric Composites
p.1342

Microstructure and Electrical Properties of Porous PZT Ceramics with Unidirectional Pore Channel Structure Fabricated by Freeze-Casting
p.1347

Electrical and Physical Properties of Lead-Free (Na_0.5K_0.5)NbO₃- Bi_0.5(Na_0.₉₃K_0.₀₇)_0.5TiO₃ Ceramics
p.1351

HomeKey Engineering MaterialsKey Engineering Materials Vols. 512-515Ferroelectric Properties of Bismuth Titanate...

Ferroelectric Properties of Bismuth Titanate Ceramics by Sm³⁺/V⁵⁺ Substitution

Abstract:

The ferroelectricity of Bi_3.25Sm_0.75Ti₃O₁₂ (BST), and Bi_3.25Sm0_.75Ti_2.97V_0.03O₁₂ (BSTV) ceramics prepared at 1100°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BST ceramics are 16 µC/cm² and 64kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BST ceramics up to 25 μC/cm², which is much larger than that of the BST ceramics. Therefore, co-sustitution of Sm and V in is effective for the improvement of the ferroelectricity of Bi₄Ti₃O₁₂ ceramic.

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Periodical:

Key Engineering Materials (Volumes 512-515)

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1333-1336

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https://doi.org/10.4028/www.scientific.net/KEM.512-515.1333

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Online since:

June 2012

Authors:

Chong Qing Huang, Min Chen, R.F. Liu, X.A. Mei, J. Liu

Keywords:

Ceramic, Dielectric, Doping, Ferroelectric, Microstructure

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References

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