Ferroelectric and Physical Characteristic of the La and V Doped on Bi4Ti3O12 Thin Film Prepared by RF Magnetron Sputtering Method

Shih Fang Chen; Kai Huang Chen; Chien Min Cheng

doi:10.4028/www.scientific.net/KEM.512-515.1321

Paper Titles

The Electrocaloric Effect in BaTiO₃ Thick Film Multilayer Structure at High Electric Field
p.1304

Influence of Lanthanum Concentration on Properties of BLT Electroceramics
p.1308

Electrical Characteristics and Microstructures of Pr₆O₁₁-Doped Bi₄Ti₃O₁₂ Ceramics
p.1313

Electrical and Physical Properties of the Bi_3.25La_0.75Ti₃O₁₂ Ferroelectric Thin Films Prepared by Conventional Temperature Annealing Process
p.1317

Ferroelectric and Physical Characteristic of the La and V Doped on Bi₄Ti₃O₁₂ Thin Film Prepared by RF Magnetron Sputtering Method
p.1321

Ferroelectric Properties and Microstructures of Tb₄O₇-Doped Bi₄Ti₃O₁₂ Thin Films
p.1325

Electrical Properties and Microstructures of Tb₄O₇-Doped Bi₄Ti₃O₁₂ Ceramics
p.1329

Ferroelectric Properties of Bismuth Titanate Ceramics by Sm³⁺/V⁵⁺ Substitution
p.1333

Piezoceramic Stack Actuators for Micropositioning Stage
p.1337

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Ferroelectric and Physical Characteristic of the La and V Doped on Bi₄Ti₃O₁₂ Thin Film Prepared by RF Magnetron Sputtering Method

Abstract:

In this study, the effects of La and V doping on Bi₄Ti₃O₁₂ (BLTV) ferroelectric thin films deposited on ITO/glass substrates using rf magnetron sputtering were produced and investigated. The effect of oxygen concentration and RF power on the physical and electrical characteristics of BLTV thin films was determined. The physical characteristics of BLTV thin films were obtained by the XRD pattern, SEM and AFM. The variations of crystallization, surface roughness and thickness of BLTV thin films were discussed. The electrical properties of BLTV thin films deposited under various parameters were measured by the HP4156C.