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Vapor-Liquid-Solid Growth of Silicon-Based Nanowires for High Sensitive Sensor

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Abstract:

Silicon-based nanowires (Si-NWs) were fabricated by vapor liquid solid (VLS) growth, and Si-NW device was prototyped using focused ion beam (FIB) processing. The needle shaped thin Si-NWs were formed at a substrate temperature between 1120 and 1313°C. The average and minimum diameters of the NWs were confirmed 60 nm and 44 nm, respectively. As the double-layered structure was observed in the NWs by transmission electron microscope images, it is possible that those are silicon-based NWs with Si core and SiO2 shell structure. From current-voltage characteristics, the Si-NW device has a semiconducting property, and the estimated resistivity of the Si-NW is about 3.1 x 104 Ωcm.

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Periodical:

Key Engineering Materials (Volume 534)

Pages:

257-261

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.534.257

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Online since:

January 2013

Authors:

Hayato Sone, Yasuyuki Suda, Daiki Kubota, Sumio Hosaka

Keywords:

Current-voltage characteristics, FIB, Focused Ion Beam (FIB), Nanowire Device, Resistivity, Si-Based Nanowire, Vapor-Liquid-Solid Growth, VLS

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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