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Influence of Substrate on μc-Si: H Thin Films

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Abstract:

By PECVD deposition technology, we mainly investigated the influence of substrate on intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with different substrates. The silicon thin film crystallization ratio and grain size changed sharply when using glass and stainless steel substrate. On this work we think ideal μc-Si:H can be obtained by using glass as substrate and in the suitable experimental conditions.

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Progress in Functional Materials View Preview

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Periodical:

Key Engineering Materials (Volume 538)

Pages:

169-172

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.538.169

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Online since:

January 2013

Authors:

Sheng Zhao Wang, Ying Peng Yin, Chun Juan Nan, Ming Ji Shi

Keywords:

Plasma Enhanced Chemical Vapor Deposition (PECVD), Silicon Thin Film, Substrate

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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