A Review of the Influential Factors on the Ferroelectric Domain Structure in BiFeO₃ Thin Films

Abstract:

BiFeO₃ is a very promising multiferroic materials, which can present ferroelectric and antiferromagnetic properties at room temperature (T_n=643 K, T_c= 1103 K). Ferroelectric domains in BiFeO₃ thin films have attracted much attention due to their potential applications in memory devices. The aim of this paper is to review the main factors which can influence the ferroelectric domain structure in BiFeO₃ thin films, including substrate, doping and film thickness.

• Periodical: Key Engineering Materials (Volume 544)
• Pages: 219-225
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.544.219
• Online since: March 2013
• Authors: Yao Ting Huang, Xiu Li Fu, Xiao Hong Zhao, Wei Hua Tang
• Keywords: BiFeO₃, Ferroelectric Domain, Influential Factor, Thin Film

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