Effect of Oxygen Partial Pressure on Properties of ZnO Films Deposited on Freestanding Diamond Films

Abstract:

Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of freestanding diamond (FSD) films by the direct current (DC) magnetron sputtering method in an oxygen (O₂) + argon (Ar) gas mixture. The effect of oxygen partial pressure on properties of ZnO films was investigated by X-ray diffraction (XRD). The results showed that when flux ratio of argon to oxygen was 1, the ZnO films had a better crystalline quality.

• Periodical: Key Engineering Materials (Volume 544)
• Pages: 230-233
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.544.230
• Online since: March 2013
• Authors: Ke Tang, Lin Jun Wang, Jian Huang, Bing Ren, Jie Zhou, Jun Le, Yi Ben Xia
• Keywords: Diamond, Magnetron Sputtering, Zinc Oxide (ZnO)

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