Properties of Li-Doped ZnO Films Deposited on Diamond Films

Abstract:

Li-doped zinc oxide (ZnO) films were deposited on nucleation side of freestanding diamond (FSD) films by the radio frequency magnetron sputtering method. The effect of oxygen partial pressure on structural, optical and electrical properties of the ZnO films was investigated by X-ray diffraction (XRD) Raman spectroscopy, semiconductor characterization system and Hall effect measurement system. The results showed that the introduction of oxygen as a reactive gas was helpful to improve the crystalline quality of Li-doped ZnO films.

• Periodical: Key Engineering Materials (Volume 544)
• Pages: 234-237
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.544.234
• Online since: March 2013
• Authors: Mei Ai Lin, Lin Jun Wang, Jian Huang, Ke Tang, Bing Ren, Jie Zhou, Yi Ben Xia
• Keywords: Diamond, Li-Doped Zinc Oxide, Magnetron Sputtering

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