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HomeKey Engineering MaterialsKey Engineering Materials Vols. 562-565Controlled Synthesis of Surface-Clean Monolayer...

Controlled Synthesis of Surface-Clean Monolayer Graphene

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Abstract:

Controlled synthesis surface-clean monolayer graphene was achieved. Monolayer Graphene was achieved by mechanical exfoliation (ME) and chemical vapor deposition (CVD),and then transferred to SiO₂(300nm)/Si substrates. There were tape residues left on the surface of the ME graphene, and poly (methyl methacrylate) (PMMA)/photoresist residues left on the surface of the CVD graphene after the transferring and lithography process. Annealing method was used to clean all these kinds of residues. Annealing processes were performed at different temperatures in both vacuum and N₂/H₂. It is conclude that N₂/H₂ is crucial for the removing of residues, and 400°C is favorable for removing the residues. Atomic force microscope (AFM) images and Raman spectra were taken to confirm the effect of the annealing.

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Periodical:

Key Engineering Materials (Volumes 562-565)

Pages:

85-90

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.562-565.85

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Online since:

July 2013

Authors:

Xue Shen Wang, Jin Jin Li, Qing Zhong, Yuan Zhong, Meng Ke Zhao

Keywords:

Annealing, Clean, CVD, Exfoliation, Monolayer Graphene

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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