Integrated-Optic Tenth-Order Micro-Ring Filters in Silicon-on-Insulator

Shu Bin Yan; Xiao Qian Wang; Ke Zhen Ma; An Fu Zhang; Chen Yang Xue; Wen Dong Zhang

doi:10.4028/www.scientific.net/KEM.562-565.991

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 562-565Integrated-Optic Tenth-Order Micro-Ring Filters in...

Integrated-Optic Tenth-Order Micro-Ring Filters in Silicon-on-Insulator

Abstract:

In the paper, it demonstrates highly integrated tenth-order filters in silicon-on-insulator (SOI). The micro-ring resonators have a small radius of 5μm and a very large free spectral range ~ 18nm at 1.55μm communication band. For through port responses, the grating and the high-order optic filters with ten coupled micro-ring resonators are designed and demonstrated, and grating responding well matches with the experiment resonators. Devices are patterned with electron-beam lithography (EBL). And 2μm SiO2 layer is covered on the silicon waveguide, thus reducing the propagation loss in micro-ring resonators.

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Periodical:

Key Engineering Materials (Volumes 562-565)

Pages:

991-995

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.562-565.991

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Online since:

July 2013

Authors:

Shu Bin Yan, Xiao Qian Wang, Ke Zhen Ma, An Fu Zhang, Chen Yang Xue, Wen Dong Zhang

Keywords:

Electron-Beam Lithography, Micro-Ring Resonators, SOI, Tenth-Order Optical Filters

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References

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