Change in Electric Field Distribution in Non-Reducing BaTiO3 Based-Dielectric Layer Loaded at High Temperature

Takafumi Okamoto; Akira Ando; Hiroshi Takagi

doi:10.4028/www.scientific.net/KEM.566.16

Paper Titles

Preface

Effect of Ferroelectric Domain on Fatigue Fracture Behavior in Piezoelectric Ceramics
p.3

Influence of Film Texture on Reliability of Sol-Gel Derived PZT Thin-Film Capacitors
p.7

Polarization Mechanism of Fine-Grained BaTiO₃ Ceramics at High Temperature Region
p.12

Change in Electric Field Distribution in Non-Reducing BaTiO₃ Based-Dielectric Layer Loaded at High Temperature
p.16

Relation between Electro-Optic Effect and Dielectric Permittivity of Ba_0.5Sr_0.5TiO₃ Thin Films
p.20

Crystal Growth and Characterization of (Bi_0.5Na_0.5)TiO₃-BaTiO₃ Single Crystals Obtained by the Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere
p.25

Ferroelectric Properties and Domain Clamping of (Bi_0.5Na_0.5)TiO₃ Single Crystals Grown under High-Oxygen-Pressure Atmosphere
p.29

Grain Size Dependence of the Microstructure and Dielectric Properties of Potassium Niobate-Barium Titanate Ceramics
p.34

HomeKey Engineering MaterialsKey Engineering Materials Vol. 566Change in Electric Field Distribution in...

Change in Electric Field Distribution in Non-Reducing BaTiO₃ Based-Dielectric Layer Loaded at High Temperature

Abstract:

The electric field distributions in loaded dielectric layers of multilayer ceramic capacitors were investigated at several stages of insulation degradation for the load, using Kelvin probe force microscopy. The electric field distribution was found to be different at each stage of loaded time. Initially, the electric field was concentrated near the cathode, indicating that the insulation resistance near the anode decreased. Then, following the homogeneous distribution shown for an intermediate stage, the electric field eventually concentrated near the anode. This change indicates how insulation degradation occurs locally; this change can plausibly be explained by a hole density increase.

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Key Engineering Materials (Volume 566)

Pages:

16-19

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.566.16

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Online since:

July 2013

Authors:

Takafumi Okamoto, Akira Ando, Hiroshi Takagi

Keywords:

Barium Titanate (BT), Electric Field Distribution, Highly Accelerated Life Time Test, Insulation Degradation, Kelvin Probe Force Microscopy, Ni-MLCC, Reliability

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References

[1] Y. Sakabe, Y. Hamaji, H. Sano and N. Wada, Jpn. J. Appl. Phys., 41, 5668 (2002).

Google Scholar

[2] T. Baiatu, R. Waser, and K. Härdtl, J. Am. Ceram. Soc., 73, 1663 (1990).

Google Scholar

[3] H. M. Duiker, P. D. Beale. J. F. Scott, C. A. Paz de Araujo, B. M. Melnick, J. D. Cuchiaro and L. D McMillan, J. Appl. Phys., 68, 5783 (1990).

DOI: 10.1063/1.346948

Google Scholar

[4] G. Y. Yang, G. D. Lian, E. C. Dickey, C. A. Randall, D. E. Barber, P. Pinceloup, M. A. Henderson, R. A. Hill, J. J. Beeson, and D. J. Skamser, J. Appl. Phys., 96, 7500 (2004).

DOI: 10.1063/1.1809268

Google Scholar

[5] H. -I. Yoo, M. -W. Chang, T. -S. Oh, and C. -E. Lee and K. D. Becker, J. Appl. Phys., 102, 093701 (2007).

Google Scholar

[6] M. Nakano, A. Saito and N. Wada, Key. Eng. Mater., 388, 201 (2009).

Google Scholar

[7] H. Chazono and H. Kishi, Jpn. J. Appl. Phys., Part 1 40, 5624 (2001).

Google Scholar

[8] T. Okamoto, N. Inoue, S. Kitagawa, H. Niimi, A. Ando and H. Takagi, Key. Eng. Mater., 485, 47 (2011).

Google Scholar

[9] T. Okamoto, S. Kitagawa, N. Inoue and A. Ando, Appl. Phys. Lett., 98, 072905 (2011).

Google Scholar

[10] M. Prades, N. Masó, H. Beltrán, E. Cordoncilloa and A. R. West, J. Mater. Chem., 20, 5335 (2010).

Google Scholar