Influence of Film Texture on Reliability of Sol-Gel Derived PZT Thin-Film Capacitors

Takashi Noguchi; Hideaki Sakurai; Jun Fujii; Toshihiro Doi; Toshiaki Watanabe; Nobuyuki Soyama

doi:10.4028/www.scientific.net/KEM.566.7

Paper Titles

Preface

Effect of Ferroelectric Domain on Fatigue Fracture Behavior in Piezoelectric Ceramics
p.3

Influence of Film Texture on Reliability of Sol-Gel Derived PZT Thin-Film Capacitors
p.7

Polarization Mechanism of Fine-Grained BaTiO₃ Ceramics at High Temperature Region
p.12

Change in Electric Field Distribution in Non-Reducing BaTiO₃ Based-Dielectric Layer Loaded at High Temperature
p.16

Relation between Electro-Optic Effect and Dielectric Permittivity of Ba_0.5Sr_0.5TiO₃ Thin Films
p.20

Crystal Growth and Characterization of (Bi_0.5Na_0.5)TiO₃-BaTiO₃ Single Crystals Obtained by the Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere
p.25

Ferroelectric Properties and Domain Clamping of (Bi_0.5Na_0.5)TiO₃ Single Crystals Grown under High-Oxygen-Pressure Atmosphere
p.29

Grain Size Dependence of the Microstructure and Dielectric Properties of Potassium Niobate-Barium Titanate Ceramics
p.34

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Influence of Film Texture on Reliability of Sol-Gel Derived PZT Thin-Film Capacitors

Abstract:

Time-dependent dielectric breakdown (TDDB) of lead titanate zirconate (PZT) thin-film capacitors derived by a sol-gel deposition process has been studied. Without any change in heat treatment conditions such as temperature, ramping rate, and keeping time, the films grain size was varied by adding a small amount of organic additive to PZT sol-gel solution for a control of nucleation to form PZT oxide. The reliability was remarkably improved by fabricating interfaces with multi-annealing process, parallel to film surface when the grain size is greater than film thickness, which seems to suppress conductivity of oxygen vacancies.

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Key Engineering Materials (Volume 566)

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7-11

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.566.7

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Online since:

July 2013

Authors:

Takashi Noguchi, Hideaki Sakurai, Jun Fujii, Toshihiro Doi, Toshiaki Watanabe, Nobuyuki Soyama

Keywords:

Ferroelectric, Lead Titanate Zirconate, Reliability, Sol-Gel Deposition Process, Thin-Film Capacitor, Time-Dependent Dielectric Breakdown

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