Application of InN Based Quantum Dot in Reducing Short Circuit Current Variation of Solar Cell above Room Temperature

Abstract:

This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect of temperature on the short circuit current of the solar cell using InN based quantum dot in the active layer of the solar cell. The numerical results are compared with those obtained by using Ge based quantum dot. The comparison results revealed that the short circuit current has been increased slightly but the variation of short circuit current has been reduced significantly in the case of using InN quantum dot in the active layer of the device structure. As the results, InN can be considered as the best alternative material to fabricate solar cell with higher short circuit current in upcoming decades.

• Periodical: Key Engineering Materials (Volumes 594-595)
• Pages: 3-7
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.594-595.3
• Online since: December 2013
• Authors: M.A. Rashid*, F. Malek, A.N. Al-Khateeb, F.A. Rosli, M.A. Humayun, N.H. Ramly
• Keywords: InN, Quantum Dot (QD), Short Circuit Current, Temperature

References

[1] O. Mah: Fundamentals of Photovoltaic Materials, National Solar Power Research Institute, Inc. (NSPRI) (1998).

[2] S. Y. Myong: Recent Progress in Inorganic Solar Cells Using Quantum Structures, Recent Patents on Nanotechnology Vol. 1 (2007) p.67.

DOI: 10.2174/187221007779814763

[3] M. A. Humayun, M. A. Rashid, F. Malek, A. Yusof, F. S. Abdullah, N. B. Ahamad: A Comparative Study of Confined Carrier Concentration of Laser Using Quantum Well and Quantum Dot in Active Layer, Advanced Materials Research 701 (2013) p.188.

DOI: 10.4028/www.scientific.net/amr.701.188

[4] M. A. Humayun, M. A. Rashid, F. A. Malek, A. N. Hussain, I. Daut: Design of Quantum Dot Based LASER with Ultra-low Threshold Current Density, Applied Mechanics and Materials 229-231 (2012) 1639.

DOI: 10.4028/www.scientific.net/amm.229-231.1639

[5] A. J. Nozik: Quantum Structured Solar Cells, in: T. Soga (Ed. ), Nanostructured Materials for Solar Energy Conversion, Elsevier B.V., (2006), p.485.

DOI: 10.1016/b978-044452844-5/50016-0

[6] S.M. Sze, K. K. Ng: Physics of Semiconductor Devices, 3rd ed., John Wiley & Sons, Inc. reprinted by Willy India Pvt. Ltd. (2009).

[7] M. Zdravkovic´, A. Vasic´, C´. Dolic´anin, K. Stankovic´, P. Osmokrovic´: University of novi Pazar Ser. A: appl. Math. Inform. And mech. Vol. 1 (1) (2009), 29-36.

[8] B. V. Zeghbroeck: Principles of Semiconductor Devices and Heterojunctions, Prentice Hall PTR (2010).

[9] M. A. Humayun, M. A. Rashid, F. A. Malek, A. N. Hussain: Effect of Lattice Constant on Band gap Energy Optimization and Stabilization of High Temperature InxGa1-xN Quantum dot Lasers, Journal of Russian Laser Research 33 (4) (2012) p.387.

DOI: 10.1007/s10946-012-9294-7

[10] A. Luque, S. Hegedus: Handbook of Photovoltaic Science and Engineering, 2nd ed., Wiley (2003).