Si/SiC-Based Layer Deposited on Boron Carbide Particles via CVD

Yu Feng Xu; Hong Qiang Ru; Xin Yan Yue

doi:10.4028/www.scientific.net/KEM.602-603.270

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 602-603Si/SiC-Based Layer Deposited on Boron Carbide...

Si/SiC-Based Layer Deposited on Boron Carbide Particles via CVD

Abstract:

The application of B₄C as structural materials has been restricted largely because of its poor sinter-ability. Compared with pressure-less and hot pressing methods, sintering the B₄C via the reaction-bonded boron carbide (RBBC) can to great extent circumvent such problem, which can even be conducted at low temperature, when Si/Si-based alloy was used as binding phase. However molten Si/Si-based alloy infiltrated into performs of bare B₄C powders can strongly react with and significantly consume B₄C particles based on molten infiltration reaction method. The present study aims to encapsulate B₄C particles with a protective layer to block off its contact with molten Si/ Si-based alloy via chemical vapor deposition (CVD) method in CH₃SiCl₃(MTS)-H₂-Ar system at low temperature (900-1100 °C) under atmospheric pressure. The phase composition and surface morphology of encapsulated B₄C particles were studied using X-ray diffraction (XRD) , scanning electron microscopy (SEM) plus energy dispersive spectrometer (EDS), respectively. It was found that the deposition temperatures have a significant effect on microstructure and composition of deposited coating. The studies on surface morphology revealed that spine-like crystals, nodular growth, island structure and whiskers can be deposited onto the surface of boron carbide particles. When deposited at 900-1000 °C,the coatings is Si + SiC co-deposition, while pure SiC coatings form only at as high deposition temperature at 1050 °Cand 1100 °C.

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Key Engineering Materials (Volumes 602-603)

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270-273

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.602-603.270

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Online since:

March 2014

Authors:

Yu Feng Xu, Hong Qiang Ru*, Xin Yan Yue

Keywords:

Boron Carbide, CVD, Si/SiC Coating

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