Study of Al/SiC Package Substrate for High Power LED

Abstract:

LED is the fourth generation of the illumination light source. The light efficiency, lifetime and reliability will be reduced, if the heat generated in LED chips couldn’t be dissipated rapidly. Thus, thermal conductivity of the substrate material is a very key factor in the LED field. Silicon Carbide with Aluminum metal composites (Al/SiC) has high thermal conductivity and ideal thermal expansion coefficient. In this paper, the main kinds of substrates for high-power LED were introduced. Al/SiC composite substrate with excellent heat conduct performance was fabricated by pressureless infiltration technology. The microstructure of Al/SiC was observed by scanning electron microscope (SEM). The coefficients of thermal expansion and thermal conductivity of Al/SiC composite substrate, AlN ceramic substrate and Al₂O₃ ceramic substrate were compared. The results showed that the coefficient of thermal expansion (CTE) of Al/SiC varied from 7.77×10^-6 K^-1 to 10.89×10^-6 K^-1, which is compatible with Silicon. And the thermal conductivity of Al/SiC is as 9 times high as that of Al₂O₃.

• Periodical: Key Engineering Materials (Volumes 602-603)
• Pages: 285-289
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.602-603.285
• Online since: March 2014
• Authors: Shuang Xi Wang*, Gao Shan Liu, Jian Yu Yan, Jia Xing Ye
• Keywords: Al/SiC, High-Power LED, Substrate

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