Fabrication and Characteristics of the 2D Magnetic Sensor Based on the MOSFET Hall Device

Xiao Feng Zhao; Jing Ya Cao; Yu Song; Dian Zhong Wen; Qian Ru Lin; Lei Tian

doi:10.4028/www.scientific.net/KEM.609-610.1066

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 609-610Fabrication and Characteristics of the 2D Magnetic...

Fabrication and Characteristics of the 2D Magnetic Sensor Based on the MOSFET Hall Device

Abstract:

This paper reports the two dimensional (2D) magnetic sensor, which is comprised of twoMOSFET Hall devices with similar characteristics. The sensor is based on the MOSFET Hall deviceprinciple and is fabricated on <100> orientation silicon substrate by adopting complementary metaloxide semiconductor (CMOS) technology and packaging technology. The experiment results indicatethat when VDS =5.0 V, the magnetic sensitivities of the 2D magnetic sensor can reach Sx=34.0 mV/Tand Sy=33.6 mV/T in the x and y directions, respectively, it is necessary to realize the measurementof 2D magnetic field.

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Periodical:

Key Engineering Materials (Volumes 609-610)

Pages:

1066-1071

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.609-610.1066

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Online since:

April 2014

Authors:

Xiao Feng Zhao*, Jing Ya Cao, Yu Song, Dian Zhong Wen, Qian Ru Lin, Lei Tian

Keywords:

2D Magnetic Sensor, CMOS Technology, Magnetic Sensitivity, MOSFET Hall Device, Packaging Technology

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