Power Handling Capability Improvement of Metal-Contact RF MEMS Switches by Optimized Array Configuration Design of Contact Dimples

Chen Xu Zhao; Xin Guo; Tao Deng; Ling Li; Ze Wen Liu

doi:10.4028/www.scientific.net/KEM.609-610.1417

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 609-610Power Handling Capability Improvement of...

Power Handling Capability Improvement of Metal-Contact RF MEMS Switches by Optimized Array Configuration Design of Contact Dimples

Abstract:

This paper presents a novel approach to enhancing power-handling capability of metal-contact radio-frequency micro-electro-mechanical systems (RF MEMS) switches based on an Optimized Array Configured (OAC) contact dimples design. The simulation results reveal that this strategy can distribute the RF current more uniformly through each contact of the switch than traditional multiple parallel-configured contacts design, thus leading to a more effective reduction of current through each contact. Therefore, probability of micromelding and adhesion at metal contact point owing to localized high current induced Joule heating, which limits the power handling capability of the metal-contact RF MEMS switch, can be effectively reduced by the proposed approach. Comparing with previously fabricated switch, power-handling capability of the switch with OAC contact dimples can be dramatically improved over 390%.

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Periodical:

Key Engineering Materials (Volumes 609-610)

Pages:

1417-1421

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.609-610.1417

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Online since:

April 2014

Authors:

Chen Xu Zhao, Xin Guo, Tao Deng, Ling Li, Ze Wen Liu*

Keywords:

Contact Dimple Design, Power-Handling Capability, RF MEMS, Switch

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* - Corresponding Author

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