Study on Preparation and Resistive Switching Characteristics of SnO₂ Films

Abstract:

In this paper, resistance switching devices with Au/SnO₂/Al sandwich structure were fabricated. The prepared devices showed a reliable unipolar resistance switching characteristic. The forming voltage of SnO₂-based resistance devices increased with increasing film thicknesses, while SnO₂ film thickness had little influence on set and reset voltages. When the SnO₂ film thickness was 46 nm, the device showed steady and reliable conversion under voltage sweeping and the ratio between high and low resistance states was higher than 10², which can basically satisfy the requirements for practical application.

• Periodical: Key Engineering Materials (Volumes 609-610)
• Pages: 169-174
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.609-610.169
• Online since: April 2014
• Authors: Hong Xia Li, Hui Chen, Wei Qing Ke, Jun Hua Xi, Zhe Kong, Zhen Guo Ji*
• Keywords: Endurance, Resistive Switching, RRAM, SnO₂ Thin Film

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