Changing Technology Requirements of Mask Metrology in Semiconductor Industry

Klaus-Dieter Roeth; Mark Wagner; Frank  Laske

doi:10.4028/www.scientific.net/KEM.613.81

Paper Titles

Highly-Stable Electronic Sensor Interface for Capacitive Position Measurement
p.51

Model and Measurement Method of Optical Nonlinearities Caused by the Heterodyne and Homodyne Interference Terms in the Heterodyne Interferometer
p.58

Orthogonality Measurement of Cross-Grating Based on Image Processing of Multi-Order Diffraction Patterns
p.64

Research on a Long Travel Nanopositioning Air Bearing Stage with the Linear Motors
p.70

Changing Technology Requirements of Mask Metrology in Semiconductor Industry
p.81

Automated Tool for Measuring Nanotopography of 300 mm Wafers at early Stages of Wafer Production
p.87

Full Scale Calibration of a Combined Tactile Contour and Roughness Measurement Device
p.94

A Virtual Instrument for SEM Uncertainty Analysis
p.101

Super-Large Gear Measurement Using Laser Tracker and CMM
p.111

HomeKey Engineering MaterialsKey Engineering Materials Vol. 613Changing Technology Requirements of Mask Metrology...

Changing Technology Requirements of Mask Metrology in Semiconductor Industry

Abstract:

Upcoming Semiconductor Technology Nodes will still be based on optical lithography by ArF water immersion technology because there are still too many open issues preventing extreme ultraviolet (EUV) lithography from being introduced into production. Several kinds of multi- patterning technology are in use to overcome the optical resolution limitation of 193nm high NA illumination and still to achieve <32nm half-pitch. Mask registration metrology must be adapted to provide useful and comprehensive data on the mask contribution to wafer overlay

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Periodical:

Key Engineering Materials (Volume 613)

Pages:

81-86

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.613.81

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Online since:

May 2014

Authors:

Klaus-Dieter Roeth*, Mark Wagner, Frank Laske

Keywords:

Intra-Field Overlay, LMS IPRO, Mask Registration, Metrology, Photomask

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* - Corresponding Author

References

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