Scalable Electrical Model and Performance Analysis of a Novel Bar TSV Structure

Zhen Song Li; Min Miao; Shao Chun Yang; Da Cheng Yang

doi:10.4028/www.scientific.net/KEM.645-646.1024

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 645-646Scalable Electrical Model and Performance Analysis...

Scalable Electrical Model and Performance Analysis of a Novel Bar TSV Structure

Abstract:

A novel Bar TSV(B-TSV) structure, formed by two semi-cylinders combining with a quadrangular is studied in this paper. This B-TSV structure extends the TSV design options by introducing new design parameters. The scalable electrical model of B-TSV is proposed and the effects of design parameters, such as the side length of quadrangular and the minimum distance between TSVs are investigated and concluded by a 3D electromagnetic solver. Performance comparison between B-TSV and the traditional cylindrical one is also provided by simulation under the Ground-Signal-Ground configuration. Simulation results show that B-TSV has better performance than the traditional one, and can be used to increase the TSV array density without degrading the electrical performance of TSV system.

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Periodical:

Key Engineering Materials (Volumes 645-646)

Pages:

1024-1031

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.645-646.1024

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Online since:

May 2015

Authors:

Zhen Song Li*, Min Miao, Shao Chun Yang, Da Cheng Yang

Keywords:

Scalable Model, Three Dimensional System in Package (3D SIP), Through Silicon via (TSV)

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* - Corresponding Author

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