Influence of Density on the Microstructure, Mechanical, Electrical and Thermal Properties of Recrystallized Silicon Carbide

Abstract:

In this paper, influence of density on the microstructure, mechanical properties, thermal and electrical properties of recrystallized silicon carbide (RSiC) were investigated via XRD, SEM, mechanical test, thermal conductivity instrument and four-probe method, etc. The results showed that the main phase of the RSiC materials was 6H-SiC; The flexural strength and modulus of elasticity of RSiC materials increased with the increase of densities, and the flexural strength of it measured at 1400 °C increased about 10%-15% compared with that of at room temperature, while the modulus of elasticity at 1400°C were lower than that of at room temperature, resulting from the weakening of binding force between the Si and C atoms at high temperature; With the increase of temperatures, the thermal conductivity of the RSiC materials decreased, while it increased with the increase of RSiC density, when density of RSiC equaled to 2.60 g·cm^­3, values of the thermal conductivity were 177.7 W·(m·K)^­1 (RT) and 28.1 W·(m·K)^­1(1300°C), respectively; The volume resistivity of RSiC materials dropped from 12.74 Ω·cm to 4.51 Ω·cm as the density of RSiC increased, the impurities played an more important role on this variety.

• Periodical: Key Engineering Materials (Volume 680)
• Pages: 93-98
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.680.93
• Online since: February 2016
• Authors: Hua Nan Lv, Xiao Liang Zhang, Peng Zhao Gao*, Dong Yun Li, Wen Xie, Han Ning Xiao
• Keywords: Density, Electrical Properties, Mechanical Properties, Microstructure, Recrystallized Silicon Carbide, Thermal Properties

References

[1] P. Z. Gao, X. L. Zhang, S. T. Huang, J. X. Liu, H. N. Xiao, Influence of MoSi2 content on the microstructure and properties of MoSi2–RSiC composites, Mater Res Bull , 54 (2014) 13-19.

DOI: 10.1016/j.materresbull.2014.03.009

[2] C. H. Carter Jr, R. F. Davis, J. Bentley, Kinetics and mechanisms of high-temperature creep in silicon carbide: II, chemically vapor deposited, J. Am. Ceram. Soc. 67 (1984) 732-740.

DOI: 10.1111/j.1151-2916.1984.tb19510.x

[3] P. Z. Gao, L. Wang, S. T. Huang, W. M. Guo H.N. Xiao, Microstructure and mechanical properties of 3-D interpenetrated network structure MoSi2–RSiC composite, Ceram. Int. 38 (2012) 5799-5805.

DOI: 10.1016/j.ceramint.2012.04.027

[4] A. Sonntag, New RSiC extends service life in kiln furniture, Am. Ceram. Soc. Bull , 76 (1997) 51-54.

[5] W. M. Guo, Sintering mechanism and performance improvements of recrystallized silicon carbide, Hunan Univ. (China), (2012).

[6] J. F. Dai, D. C. Chen, Q. Li, First-principle study on the X (X=N, P, As, Sb) doped single-walled SiC nanotubes, Physica B: Condensed Matter , 447 (2014) 56-61.

DOI: 10.1016/j.physb.2014.04.065

[7] Z. D. Guan, Z. T. Zhang, J. S. Qiao, Physical properties of inorganic materials, Second ed. Tsing Hua Univ. Press, (2011).

[8] Q. J. Ning, G. Q. Tan, Y.S. Shi, Physical properties of inorganic materials, Chem. Ind. Press, (2005).

[9] J. G. Kim,Y. H. K, K. M. Lee, H. C. Sohn, Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress, Thermochim. Acta 542 (2012) 6-10.

DOI: 10.1016/j.tca.2012.01.006

[10] W. D. Kingery, H. K. Bowen, D. R. Uhlmann, Introduction to Ceramics, Second ed. John Wiley & Sons, Massachusetts, (1975).

[11] D. P. H. Hasselman, J. R. Thomas, Thermal conductivity , Springer US, 1989, pp.141-152.

[12] H. N. Xiao, P. Z. Gao, High performance and application of structural ceramics, Chem. Ind. Press, Beijing, 2006, pp.157-168.