High Temperature Oxidation Behavior of Silicon Carbide Ceramic

Ming Wei Chen; Hai Peng Qiu; Jian Jiao; Yu Wang; Wei Jie Xie

doi:10.4028/www.scientific.net/KEM.680.89

Paper Titles

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Finite Element Analysis of Head-Form Impacting Laminated Glass for Automotive Windscreens
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MLD Method for the Determination of Major Components in MgO-Cr Refractory Products
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Numerical Simulation of Powder Dispersion Performance by Different Mesh Types
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High Temperature Oxidation Behavior of Silicon Carbide Ceramic
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Influence of Density on the Microstructure, Mechanical, Electrical and Thermal Properties of Recrystallized Silicon Carbide
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Shape and Distribution of Pores in SiC Ceramic Membrane Supports Formed by Extrusion Molding
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 680High Temperature Oxidation Behavior of Silicon...

High Temperature Oxidation Behavior of Silicon Carbide Ceramic

Abstract:

Oxidation thermodynamics of silicon carbide (SiC)ceramic was studied by means of HSC Chemistry code, and the weight change, morphology and phase of oxidation products were analyzed by thermogravimetric analysis(TG), scanning electron microscopy(SEM ) and X-ray diffraction (XRD). The results showed that SiC ceramic could be oxidized to silicon dioxide(SiO2) with release of small molecular gases under oxidizing atmosphere at 800°C, and the formed SiO2 film with appropriate fluidity and low oxygen diffusion coefficient could prevent the spread of oxygen with the oxidation temperature increasing up to 1200°C, which favored the anti-oxidation of SiC ceramic matrix composite.

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Periodical:

Key Engineering Materials (Volume 680)

Pages:

89-92

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.680.89

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Online since:

February 2016

Authors:

Ming Wei Chen*, Hai Peng Qiu, Jian Jiao, Yu Wang, Wei Jie Xie

Keywords:

Anti-Oxidation, Glass, Oxide Films

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