The Influence of Al₂O₃ and TiO₂ Additions on the Sintering Behavior of Partial Reaction Bonding Silicon Nitride

Abstract:

To compare the influence of Al₂O₃ and TiO₂ on the sintering behavior of partial reaction bonding silicon nitride (RBSN) and post densification behavior, different amounts of Al₂O₃ or TiO₂ have been added into Si-Si₃N₄-Y₂O₃ system. The results indicated that a high amount of Al₂O₃ addition inhibited the reaction bonding process, a lower nitridation degree was obtained, while TiO₂ has limited influence on nitridation, only slightly decreased nitration degree with increasing TiO₂ addition. After post sintered at 1800 °C, a density ranging from 2.31 to 3.09g/cm³ were obtained with additions of Al₂O₃ and TiO₂, much larger than the one without them. The linear shrinkage of post-sintered samples was strongly promoted with high Al₂O₃ content, but it was irrelevant with the amount of TiO₂. The highest bending strength of 523MPa can be obtained with addition of 6wt% Al₂O₃. TiO₂ transformed into TiN which located at grain boundary interfaces, restraining the grain growth of β-Si₃N₄ and leading to an inferior flexural strength after post sintered at 1800 °C.

• Periodical: Key Engineering Materials (Volume 697)
• Pages: 193-197
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.697.193
• Online since: July 2016
• Authors: Jian Deng*, Dong Xu Yao, Yong Feng Xia, Kai Hui Zuo, Han Qin Liang, Yu Ping Zeng
• Keywords: Al₂O₃, Partial Reaction Bonding, Silicon Nitride, Sintering Adds, TiO₂

References

[1] A. J. Moulson. J. Mater. Sci. 14(1979). 1017-1051.

[2] D. X. Yao, Y. F. Xia, K. H. Zuo, et al. J. Europ. Ceram. Soc. 33(2)(2013). 371-374.

[3] N. Kondo, H. Hyuga, H. Kita, et al. J. Ceram. Soc. Japan. 115(4)(2007). 285-289.

[4] L. K. L. Falk, R. Pompe,G. L. Dunlop. J. Mater. Sci. 20(10)(1985). 3545-3556.

[5] F. l. Yu, H.R. Wang, Y. Bai, et al. Bull. Mater. Sci. 33(5)(2010). 619-624.

[6] J. G. Fisher, S. K. Woo, K. Bai, et al. J. Europ. Ceram. Soc. 23(5)(2003). 791-799.

[7] C.D. Santos, K. Strecker, F. Piorino Neto, et al. Materials Research. 6(4)(2003). 463-467.

[8] T. Hayashi, H. Munakata, H. Suzuki, et al. J. Mater. Sci. 21(10)(1986). 3501-3508.

[9] J.F. Yang, T. Ohji,K. Niihara. J. Am. Ceram. Soc. 83(82)(2004). 2094 - (2096).

[10] T. Junichi, M. Toyama, K. Noguchi, et al. Key Eng. Mater. 247(1)(2003). 83-86.

[11] R.G. Duan, G. Roebben, J. Vleugels, et al. Acta Materialia. 53(9)(2005). 2547-2554.

[12] A. Maglica, K. Krnel,T. Kosmac. Materials and technology. 44(31)(2010). 31–35.

[13] L. Gao, J.G. Li, T. Kusunose, et al. J. Europ. Ceram. Soc. 24(2)(2004). 381-386.

[14] K. Ueno, T. Inoue, S. Sodeoka, et al. J. Ceram. Soc. Japan. 105(1997). 304-307.

[15] B.T. Leea H.D. Kimb. Mater. Sci. Eng. A. 364(1–2)( 2004). 126–131.

[16] D. X. Yao, Y. F. Xia, K. H. Zuo, et al. J. Europ. Ceram. Soc. 34(15)(2014). 3461-3467.

[17] L. A. Genova, V. A. Izhevskyi, J. C. Bressiani. J. Europ. Ceram. Soc. 28(1)(2008). 295-301.

[18] R. Duan, G. Roebben, J. Vleugels, et al. Scripta Materialia. 53(6)(2005). 669-673.