Characterization of Stoichiometric ZrO₂ Thin Film on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy

Abstract:

Simultaneous thermal oxidation and nitridation technique was utilized to transform sputtered Zr to stoichiometric ZrO₂ thin films on Si substrate. The stoichiometry of this type of oxide has high dielectric constant value of ~25 may be applied as dielectric in metal-oxide-semiconductor-based power devices. Through nitrous oxide gas environment, the oxidation/nitridation process was performed at 700°C for a set of time of 5–20 min. Chemical properties of the fabricated films have been characterized by angle-resolved x-ray photoelectron spectrometer. From the characterization, it was found that stoichiometric Zr-O (ZrO₂) was formed. Nitrogen content in the samples was investigated. It was identified that sample oxidized/nitrided for 15 min gives the highest atomic percentage of nitrogen of 2.64 at% in the interfacial layer. This nitrogen content in the near interface region may help to passivate the Si dangling bonds, which may thus enhance the interface quality of oxide-semiconductor.

• Periodical: Key Engineering Materials (Volume 701)
• Pages: 77-82
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.701.77
• Online since: July 2016
• Authors: Yew Hoong Wong*, Kuan Yew Cheong
• Keywords: Angle-Resolved, Nitrogen, Oxide, Thin Film

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