Electrical Characteristics of Different Gate Geometry of FinFET

Nuttapong Patcharasardtra; Weera Pengchan

doi:10.4028/www.scientific.net/KEM.705.174

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 705Electrical Characteristics of Different Gate...

Electrical Characteristics of Different Gate Geometry of FinFET

Abstract:

This paper proposed to the electrical characteristics of difference gate geometry of FinFET. Four of difference gate structure have been designed and simulated by GTS Framework TCAD software which is simulation the characteristics of FinFET device include drain current-voltage, threshold voltage and subthreshold swing. Then, the electrical characteristics was compared. From the result found that the drain current depend on gate geometry of FinFET. The largest gate geometry of FinFET device was the rectangle shape with gate width at 66 nm, I_DS about 19.8 mA and V_TH = 0.5 V and the smallest gate geometry, the triangle shape with gate width at 52 nm and give I_DSabout 8.5 mA and V_th = 0.5 V.

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Periodical:

Key Engineering Materials (Volume 705)

Pages:

174-178

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.705.174

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Online since:

August 2016

Authors:

Nuttapong Patcharasardtra, Weera Pengchan*

Keywords:

FinFET, Gate Geometry, Nano Technology, Simulation

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