Resistive Switching in NiO/BiFeO₃ Thin Film

Abstract:

NiO/BiFeO₃ thin film has been deposited on Pt/Ti/SiO₂/Si substrate by sol-gel method. The structure of thin film is analyzed by X-ray diffraction, and the result of X-ray diffraction shows that a perovskite crystal structure can be well-grown on Pt/Ti/SiO₂/Si substrate. In addition, the surface morphology is characterized by a scanning probe microscope, and the image of scanning probe microscope indicates a good crystalline quality of NiO/BFO thin film. Moreover, the current-voltage properties are also measured by a semiconductor characterization system, and the stable and reproducible nonvolatile resistive switching characteristic for the memory application have been clearly observed in Pt/NiO/BiFeO₃/Pt structure, which could be attributed to the formation and rupture of filament localized in NiO thin layer.

• Periodical: Key Engineering Materials (Volume 723)
• Pages: 439-443
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.723.439
• Online since: December 2016
• Authors: Jin Ming Luo*
• Keywords: Bismuth Ferrite, NiO, Resistive Switching, Sol-Gel, Thin Film

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