Research on the Effect of High-Temperature Melting β-SiC by Raw Materials and Power Supply

Ze Min Wu; Xiao Gang Wang; Zi Min Fan; Li Rong Deng; Shu He Lu

doi:10.4028/www.scientific.net/KEM.727.294

Paper Titles

Thermal Analysis Kinetics of Pd-Doped SiO₂ Organic-Inorganic Hybrid Material
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TiO₂ Nanoparticles Synthesized with Ti(SO₄)₂ as Precursor via the Hydrothermal Method and their Optical Absorption Properties
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Fabrication of g-C₃N₄ Microspheres without Template via Microwave Heating Method
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The Tight-Binding Calculation Research of the Silicene Structure
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Research on the Effect of High-Temperature Melting β-SiC by Raw Materials and Power Supply
p.294

Glutathione-Directed Green Synthesis of Ag Nanoclusters with Highly Fluorescence
p.297

Preparation and Optical Properties Research on Graphene Quantum Dots
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Preparation and Properties of β/α SiC Composite Ceramics
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A Review - The Properties and Applications of Nano-Structured Titanium Oxide Materials
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 727Research on the Effect of High-Temperature Melting...

Research on the Effect of High-Temperature Melting β-SiC by Raw Materials and Power Supply

Abstract:

Using high quality carbon raw material,high quality silica raw material , the β-SiC powder are prepared by high-temperature vacuum smelting method. The effects of different materials and electrical power to the product of β-SiC quality has been studied. The microstructure and phase analysis of β-SiC powder samples were observed by Scanning Electron Microscopy and X-ray diffraction. The result shows that the raw materials are better, the product quality are better. In addition, the result also indicates that the β-SiC powder have better quality when the power are 3000W.

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Periodical:

Key Engineering Materials (Volume 727)

Pages:

294-296

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.727.294

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Online since:

January 2017

Authors:

Ze Min Wu, Xiao Gang Wang*, Zi Min Fan, Li Rong Deng, Shu He Lu

Keywords:

Power Supply, Purity, Raw Materials, β-SiC

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