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HomeKey Engineering MaterialsKey Engineering Materials Vol. 748Studies on the Structure and Properties of ZnSb...

Studies on the Structure and Properties of ZnSb Thin Films Deposited under Various Sputtering Conditions

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Abstract:

In this paper ZnSb thin films were prepared by radio frequency magnetron sputteringfrom a stoichiometric Zn₄Sb₃ target followed by thermal annealing. The influence of sputteringconditions on microstructure, surface morphology, crystallinity and electrical transport propertieswere investigated. For the range of sputtering power of 50 W to 125 W and working pressure of 0.7Pa, it was found that the content of compound ZnSb phase in the films as well as film crystallinitycould be enhanced greatly by increasing the sputtering power, and this effect may be reinforced bydecreasing the working pressure to 0.2 Pa. At 0.7 Pa, A maximum value of 2.99 μW/cmK² of powerfactor measured at room temperature was obtained at 100 W. The sample prepared at the samepower and lower pressure of 0.2 Pa has a room temperature power factor of 5.46 μW/cmK² which isalmost doubled.

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Advanced Materials and Engineering Materials VI

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Periodical:

Key Engineering Materials (Volume 748)

Pages:

143-147

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.748.143

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Online since:

August 2017

Authors:

Hao Jie Xu, Juan Qin*, Peng Fei Gao, Wei Min Shi, Lin Jun Wang

Keywords:

Magnetron Sputtering, Thermoelectric Material, Thin Films, ZnSb

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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