Analysis of Carrier Transport Mechanism for p-Type SnO Thin-Film Transistor

Abstract:

Temperature effect on the I-V characteristics of tin monoxide thin film transistors (SnO TFTs) has been analyzed. The result shows that the drain current of the SnO TFT obeys the Meyer-Neldel rule under low temperature, where current conduction is a thermally activated process. The carrier transport would be dominated by multiple trapping conduction, while, percolation conduction mechanism holds as the temperature increase.

• Periodical: Key Engineering Materials (Volume 748)
• Pages: 122-126
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.748.122
• Online since: August 2017
• Authors: Jian Qin*, Lei Qiang
• Keywords: Meyer-Neldel Rule, Multiple Trapping, Percolation, Thin Film Transistor, Tin Monoxide

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