CoAl2O4 Spinel Growth on SiO2 Substrates via Annealing of Magnetron Sputtered Thin Films

Iuriy A. Eremeev; Dmytro V. Honcharenko; Aleksander V. Semencha

doi:10.4028/p-w1q4oz

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 943CoAl2O4 Spinel Growth on SiO2 Substrates via...

CoAl₂O₄ Spinel Growth on SiO₂ Substrates via Annealing of Magnetron Sputtered Thin Films

Abstract:

The layers of Al and Co are deposited successively on SiO₂ substrates using magnetron sputtering technique. Thereafter, annealing is provided at 1100°C in 2-195 minutes in the muffle furnace. The color of the layers is changed gradually from brown at 2 minutes to blue at 195 minutes. The change of the structure during annealing is seen from the Raman spectra. The line at 188 cm^-1 shifts to 203 cm^-1, which shows the substitution of the Co³⁺ with less massive Al³⁺ ions during the formation of CoAl₂O₄. The most intensive peak at 505 cm^-1 disappears after the process is finished in 60 minutes. the annealing is provided in the Ar+O₂ atmosphere with 5% and 0.07% of oxygen in the temperature range from 850 to 1100 °C. The film with the layered structure is obtained at the low oxygen conditions.

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Periodical:

Key Engineering Materials (Volume 943)

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145-150

DOI:

https://doi.org/10.4028/p-w1q4oz

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Online since:

March 2023

Authors:

Iuriy A. Eremeev*, Dmytro V. Honcharenko, Aleksander V. Semencha

Keywords:

Annealing, CoAl₂O₄, Magnetron Sputtering, Raman

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