Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Operation

Arash Salemi; Bob Zhu; Phong Bui-Quang; Yu Ding; Kiran Chatty; Alvin Liu; David Sheridan

doi:10.4028/p-6yitf5

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 945Optimized 750V SiC MOSFETs for Electric Vehicle...

Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Operation

Abstract:

We report an AEC-Q101-qualified 750V, 15 mΩ planar SiC MOSFETs with a long short circuit withstand time (SCWT) of > 9μs at V_DS=400V and V_GS=15V and a low specific on-resistance (R_ON,SP) of 2.1 mΩ.cm² at V_GS=15V designed for xEV traction inverter applications. The R_DS₍_on) at V_GS=15V increases from 15mΩ at 25 °C to 21 mΩ at 175 °C. A low turn-on (E_ON) and turn-off (E_OFF) switching energy loss of 95.5μJ and 67μJ at I_DS=75A, V_DS=400V was measured at 25 °C. The gate oxide lifetime at worst case operating fields of 5MV/cm is >> 20 years.

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Periodical:

Key Engineering Materials (Volume 945)

Pages:

67-70

DOI:

https://doi.org/10.4028/p-6yitf5

Citation:

Cite this paper

Online since:

May 2023

Authors:

Arash Salemi*, Bob Zhu, Phong Bui-Quang, Yu Ding, Kiran Chatty, Alvin Liu, David Sheridan

Keywords:

AECQ-101, E_OFF, E_ON, R_DS(on), R_ON,SP, Short Circuit Withstand Time (SCWT), SiC MOSFET, TDDB, V_th

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Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

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