Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study

Muhaimin Haziq; Norshamsuri Ali; Shaili Falina; Hiroshi Kawarada; Mohd Syamsul

doi:10.4028/p-xxb0t7

Paper Titles

Preface

Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT
p.3

Nanomanipulation of Functionalized Gold Nanoparticles on GaN
p.9

Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study
p.15

Comparison of the Electrical Performance of AlN and HfO₂Passivation Layer in AlGaN/GaN HEMT
p.21

Microfiber Optics Liquid Refractometer: The Effect of Taper Waist
p.27

Temperature Dependence of Electrical Characteristics of ZnO Nanowire Field-Effect Transistors with AZO and Aluminium Source/Drain Contact
p.33

Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness
p.39

Investigation on Absorption and Photocurrent in Silicon Absorber with Varied Pyramid Texture Angles by Ray Tracer
p.47

HomeKey Engineering MaterialsKey Engineering Materials Vol. 947Impact of Notch Structures on Transfer...

Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study

Abstract:

Lateral GaN devices, with a substantial critical breakdown field and increased mobility of two-dimensional electron gas (2DEG), are particularly promising for future power applications. Despite low power consumption by design, further improvements are required in numerous areas, including reliability concerns and switching loss, usually contributing to significant power loss. The research objective concerns the impact of different notch structures on the transfer characteristics of GaN-based high-electron-mobility transistor (HEMT) devices. Thirteen simulated models were produced using COMSOL Multiphysics, incorporating the electrical, structural, and piezoelectric effects of the device. From the results, notch-structure devices demonstrated better electrical characteristics than devices using conventional architecture, particularly a model with a double-notch design. Higher transconductance and maximum drain current were among the improvements, benefiting from the notch structure at the barrier layer.

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Periodical:

Key Engineering Materials (Volume 947)

Pages:

15-20

DOI:

https://doi.org/10.4028/p-xxb0t7

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Online since:

May 2023

Authors:

Muhaimin Haziq*, Norshamsuri Ali, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul

Keywords:

2DEG, Gallium Nitride, High-Electron Mobility Transistor, Notch

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* - Corresponding Author

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