Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes

Marco Boccarossa; Alessandro Borghese; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace

doi:10.4028/p-mlkxy8

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 947Numerical Analysis of the Schottky Contact...

Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes

Abstract:

In this paper, the impact of the anode contact in SBDs, PiN, JBS and MPS diodes is analyzed through TCAD simulations. The focus of the investigation is the correct simulation of the Schottky barrier height on the different areas of the device to correctly simulate a JBS or MPS structure. It is found that the splitting of the anode contact and an accurate selection of the Schottky barrier height on pzone is necessary to allow the onset of the bipolar conduction in MPS devices. In this way, it is possible to correctly analyze the behavior of an MPS diode, including the snapback phenomenon.

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Periodical:

Key Engineering Materials (Volume 947)

Pages:

95-102

DOI:

https://doi.org/10.4028/p-mlkxy8

Citation:

Cite this paper

Online since:

May 2023

Authors:

Marco Boccarossa*, Alessandro Borghese, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace

Keywords:

JBS Diode, MPS Diode, Ohmic Contact, Schottky Contact, Snapback, TCAD Simulation

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Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

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