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HomeKey Engineering MaterialsKey Engineering Materials Vol. 947Optimizing PECVD a-SiC:H Films for Neural...

Optimizing PECVD a-SiC:H Films for Neural Interface Passivation

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Abstract:

This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning the PECVD deposition parameters, the composition, structure, electrical, and mechanical properties of the films can be optimized for high resistivity, low stress, and great resistance to chemical attack. This optimization will eventually allow a-SiC:H to be used as an ideal insulation, passivation and protection layer for thin and biocompatible all-SiC neural interfaces.

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International Conference on Silicon Carbide and Related Materials ICSCRM 2022

Engineering Materials: Research and Application Optimization

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Periodical:

Key Engineering Materials (Volume 947)

Pages:

83-88

DOI:

https://doi.org/10.4028/p-762f40

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Cite this paper

Online since:

May 2023

Authors:

Scott Greenhorn*, Konstantinos Zekentes, Edwige Bano, Valerie Stambouli, Andrei Uvarov

Keywords:

Amorphous, Biosensor, Neural Interface, PECVD

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Creative Commons CC BY 4.0

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* - Corresponding Author

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