The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices

Cai Ping Wan; Kai Yu Wang; Tian Chun Ye; Heng Yu Xu

doi:10.4028/p-x53Ak2

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Hierarchical Nitrogen Nanoporous Carbons by Surfactant-Assisted Synthesis of Zeolitic-Imidazolate Frameworks for High Performance Supercapacitor
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The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices
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Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 950The Gate Oxide Breakdown Failures of 4H-SiC MOS...

The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices

Abstract:

A study of Weibull distribution of 4H-SiC MOS capacitors has shown the effect of temperature as well as electric-field stress on the analysis of time-dependent breakdown. Time-Dependent Dielectric Breakdown (TDDB) is strongly electric-field dependent and temperature-dependent. In the paper, the test was at the stress level of 9.5, 10, and 10.5 MV/cm under 373K, through the TDDB model, the lifetime of the SiO₂ can reach more than 30 years when the field pressure is not more than 6.6 MV /cm. The acceleration factor for TDDB (using E-Model) under different temperature stress, it expected that the capacitors would last for 2.28×10⁷ years under 3MV/cm or 54 years under 6MV/cm at 373K.

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Periodical:

Key Engineering Materials (Volume 950)

Pages:

113-118

DOI:

https://doi.org/10.4028/p-x53Ak2

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Online since:

July 2023

Authors:

Cai Ping Wan, Kai Yu Wang, Tian Chun Ye, Heng Yu Xu*

Keywords:

Relibility, SiC MOSCAP, Time-Dependent Dielectric Breakdown (TDDB), Time-Zero Dielectric Breakdown (TZDB), Weibull Distribution

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