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HomeKey Engineering MaterialsKey Engineering Materials Vol. 950Simulation of Threshold Voltage Instability of...

Simulation of Threshold Voltage Instability of 4H-SiC MOSFET

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Abstract:

The reliability issue of threshold voltage (V_gs₍_th₎) still exists in Silicon carbide (SiC) based metal-oxide-semiconductor-field-effect-transistors (MOSFETs). In this paper, the threshold voltage instability of 4H-SiC MOSFET is deeply studied through Silvaco TCAD simulation. This work mainly investigates the instability (shift) of the V_gs₍_th₎ affected by interface states (interface traps), near interface traps, and mobile ions. The results display that the effect of near interface traps on the V_gs₍_th₎ shift is greater than that of interface traps. The electron capture ability is related to the energy level of the traps. With the energy level increasing, the V_gs₍_th₎ shift increases firstly and then decreases. The peak energy level is related to the trap position and trap density. Furthermore, the effect of the mobile ions in the oxide layer on the V_gs₍_th₎ shift is limited. However, when moving to the SiC/SiO₂interface, they will greatly impact the V_gs₍_th₎ and affect the device performance seriously.

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Periodical:

Key Engineering Materials (Volume 950)

Pages:

119-126

DOI:

https://doi.org/10.4028/p-03lZAF

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Online since:

July 2023

Authors:

Si Jie Fan, Ming Min Huang, Cai Ping Wan, Min Gong, Heng Yu Xu*

Keywords:

4H-SiC MOSFET, Interface States, Mobile Ions, Near Interface Traps, Threshold Voltage Instability

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© 2023 Trans Tech Publications Ltd. All Rights Reserved

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