The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail

Xiao Guang Wei; Yun Lai An; Hong Yi Xu; Bao Zhu Wang; Qing Guo; Fei Yang; Heng Yu Wang

doi:10.4028/p-EW1caZ

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 950The Investigation of 1200V SiC MOSFET...

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail

Abstract:

Short circuit characteristics of 4H-SiC MOSFETs with different channel lengths are studied in this work. The peak drain-source current during the short-circuit period is measured. These results show that short channel devices has lower capability to sustain short-circuit condition. This work found an evident current tail after the gate turning off. Through the investigation with different device design, circuit condition and numeric simulation. The cause of the current tail is found to be due to the increased ionization of electron-hole pair as the junction temperature is elevated at long short-circuit condition.

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Periodical:

Key Engineering Materials (Volume 950)

Pages:

127-131

DOI:

https://doi.org/10.4028/p-EW1caZ

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Online since:

July 2023

Authors:

Xiao Guang Wei, Yun Lai An, Hong Yi Xu, Bao Zhu Wang, Qing Guo, Fei Yang, Heng Yu Wang*

Keywords:

Channel Length, Current Tail, Ionization, Short-Circuit, SiC MOSFET

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