Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors

Kai Yu Wang; Cai Ping Wan; Wen Hao Lu; Nian Nian Ge; Heng Yu Xu

doi:10.4028/p-fAgd0D

Paper Titles

Hierarchical Nitrogen Nanoporous Carbons by Surfactant-Assisted Synthesis of Zeolitic-Imidazolate Frameworks for High Performance Supercapacitor
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The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices
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Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
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The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail
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Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors
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Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC
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Influence of Acceptor Incomplete Ionization in p⁺ Emitter on SiC LTT with n-Type Blocking Base
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Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module
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Automatic Design of a Busbar in SiC Controller
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 950Factors Affecting Bias Temperature Instability in...

Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors

Abstract:

The threshold voltage of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) show instability during normal operation, especially after bias temperature stress (BTS), and this phenomenon is called bias temperature instability (BTI). In this work, to study the factors affecting threshold voltage (V_th) instability of SiC MOSFETs, flat-band voltage (V_fb) instability of 4H-SiC metal-oxide-semiconductor (MOS) capacitors is discussed instead. Some factors, including the polarity of gate bias stress, stress time, and stress temperature, are analyzed by performing one-way bias stress C-V measurements in the devices. Firstly, positive bias stress leads to a positive V_fb shift, and negative bias stress leads to a negative one. Moreover, the V_fb shift appears to exhibit a linear relationship with log (stress time). Furthermore, the V_fb shift decreases over the temperature range of 225 K to 400 K, but slightly increases at 475 K. Finally, the V_fb stability of the MOS devices fabricated by 1200 °C NO post-oxidation annealing (POA) and those fabricated by 1250 °C NO POA is similar.

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Periodical:

Key Engineering Materials (Volume 950)

Pages:

133-138

DOI:

https://doi.org/10.4028/p-fAgd0D

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Online since:

July 2023

Authors:

Kai Yu Wang, Cai Ping Wan, Wen Hao Lu, Nian Nian Ge, Heng Yu Xu*

Keywords:

4H-SiC, Bias Temperature Instability, Flat-Band Voltage, MOS Capacitor, NO Annealing

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