Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

Ding Kun Ma; Guo Chun Xiao; Kai Gao; Yan Nie; Tian Shu Yuan; Liang Jun Ma; Lai Li Wang

doi:10.4028/p-fLF5CT

Paper Titles

Hierarchical Nitrogen Nanoporous Carbons by Surfactant-Assisted Synthesis of Zeolitic-Imidazolate Frameworks for High Performance Supercapacitor
p.105

The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices
p.113

Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
p.119

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail
p.127

Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors
p.133

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC
p.139

Influence of Acceptor Incomplete Ionization in p⁺ Emitter on SiC LTT with n-Type Blocking Base
p.149

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module
p.155

Automatic Design of a Busbar in SiC Controller
p.165

HomeKey Engineering MaterialsKey Engineering Materials Vol. 950Structure and the Thermal Management of a 3-D...

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

Abstract:

Silicon carbide (SiC) device has higher switching frequency, higher breakdown voltage, and lower on-state voltage drop, which makes it subversive potential in the high power density applications. However, the traditional packaging structure cannot cope with the high power density of SiC devices, so the existing commercial SiC power module can only be used in derating applications. This paper proposed a 3-D packaging design method for high power density MOSFET power module, in which the cooling system is integrated inside the module to reduce the thermal resistance and the temperature difference of the SiC MOSFET chips. At the same time, the heat dissipation process of the new structure is modeled and analyzed, and the accuracy of the model is proved by experiment and simulation.

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Periodical:

Key Engineering Materials (Volume 950)

Pages:

155-163

DOI:

https://doi.org/10.4028/p-fLF5CT

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Online since:

July 2023

Authors:

Ding Kun Ma, Guo Chun Xiao, Kai Gao, Yan Nie, Tian Shu Yuan, Liang Jun Ma, Lai Li Wang*

Keywords:

Silicon Carbide MOSFET, Thermal Management, WBG Device Packaging

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