Influence of Acceptor Incomplete Ionization in p+ Emitter on SiC LTT with n-Type Blocking Base

Xi Wang; Ming Xuan Qiu; Hong Bin Pu; Yu Xi Zhang; Jian Ning Xu; Hang Qi Wan; Zhao Yang Wang

doi:10.4028/p-x8uABh

Paper Titles

Hierarchical Nitrogen Nanoporous Carbons by Surfactant-Assisted Synthesis of Zeolitic-Imidazolate Frameworks for High Performance Supercapacitor
p.105

The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices
p.113

Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
p.119

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail
p.127

Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors
p.133

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC
p.139

Influence of Acceptor Incomplete Ionization in p⁺ Emitter on SiC LTT with n-Type Blocking Base
p.149

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module
p.155

Automatic Design of a Busbar in SiC Controller
p.165

HomeKey Engineering MaterialsKey Engineering Materials Vol. 950Influence of Acceptor Incomplete Ionization in p+...

Influence of Acceptor Incomplete Ionization in p⁺ Emitter on SiC LTT with n-Type Blocking Base

Abstract:

Influence of acceptor incomplete ionization in p⁺ emitter on characteristics of SiC LTT with n-type blocking base was investigated in this work through TCAD simulation. The incomplete ionization model in the p⁺ emitter was shielded for comparison of the influence of acceptor complete ionization status. The minimum triggering intensity, forward on-state voltage drop, turn-on delay time and anode voltage falling time were simulated and discussed. The simulation results indicated that the acceptor incomplete ionization in p⁺ emitter makes the minimum triggering intensity, forward on-state voltage drop, switch-on delay time and anode voltage falling time increase by about 3.0 times, 1.24 times, 22% and 2.55 times, respectively.

You might also be interested in these eBooks

Asia-Pacific Conference on Silicon Carbide and Related Materials 2022

View Preview

Materials for Energy Storage and Conversion

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 950)

Pages:

149-154

DOI:

https://doi.org/10.4028/p-x8uABh

Citation:

Cite this paper

Online since:

July 2023

Authors:

Xi Wang, Ming Xuan Qiu, Hong Bin Pu*, Yu Xi Zhang, Jian Ning Xu, Hang Qi Wan, Zhao Yang Wang

Keywords:

Acceptor, Incomplete Ionization, Light Triggered Thyristor, Silicon Carbide

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Kimoto T, Yonezawa Y. Current status and perspectives of ultrahigh-voltage SiC power devices[J]. Materials Science in Semiconductor Processing, 2017: 43-56.

DOI: 10.1016/j.mssp.2017.10.010

Google Scholar

[2] Li Z, Zhou K, Zhang L, et al. A simple multistep etched termination technique for 4H-SiC GTO thyristors[J]. Solid-state Electronics, 2019: 1-5.

DOI: 10.1016/j.sse.2018.10.013

Google Scholar

[3] Hasegawa J, Pace L, Phung L V, et al. Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 1203-1208.

DOI: 10.1109/ted.2017.2657223

Google Scholar

[4] Levinshtein M E, Mnatsakanov T T, Yurkov S N, et al. High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base[J]. Semiconductors, 2016, 50(3): 404-410.

DOI: 10.1134/s1063782616030155

Google Scholar

[5] Chowdhury S, Hitchcock C, Stum Z, et al. 4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n-Substrates[J]. IEEE Electron Device Letters, 2016, 37(3): 317-320.

DOI: 10.1109/led.2016.2521164

Google Scholar

[6] Wang X, Pu H, Liu Q, et al. Demonstration of 4H-SiC Thyristor Triggered by 100-mW/cm2 UV Light[J]. IEEE Electron Device Letters, 2020, 41(6): 824-827.

DOI: 10.1109/led.2020.2988913

Google Scholar