Optical Ionization of Qubits and their Silent Charge States

Abstract:

Color centers in the technologically mature material silicon carbide are candidates for the implementation of quantum applications. Chargestate control and electrical read-out of qubits includes spin-to-charge conversion via optical excitation and subsequent ionization. In this work we address the dominant photoionization mechanism and the photophysical properties of the ionized silicon vacancy in 4H SiC using ab initio theory. We find that its nominally dark chargestates are infrared emitters.

• Periodical: Key Engineering Materials (Volume 984)
• Pages: 9-15
• DOI: https://doi.org/10.4028/p-9trMUe
• Online since: August 2024
• Authors: Michel Bockstedte*, Maximilian Schober
• Keywords: Ab Initio Theory, Multiplet States, Photoionization Cross Section, Silicon Vacancy

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