Paper Titles

On the Formation of ¹¹¹In-Donor Atom Pairs in Silicon as Observed by PAC
p.551

Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method
p.557

Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon
p.563

Hydrogen Diffusion and Hydrogen-Dopant Reactions in Crystalline Silicon
p.573

Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs
p.579

Selective Hydrogen Passivation of Oxygen-Related Thermal-Donor Clusters in Silicon
p.585

Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si
p.591

In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere
p.597

The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors
p.603

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Photoluminescence Detection of the Shallow...

Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

579-584

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.579

Citation:

Cite this paper

Online since:

January 1986

Authors:

Joerg Weber, F. Bantien, Stephen J. Pearton, W.C. Dautremont-Smith

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: