Paper Titles

Hydrogen Diffusion and Hydrogen-Dopant Reactions in Crystalline Silicon
p.573

Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs
p.579

Selective Hydrogen Passivation of Oxygen-Related Thermal-Donor Clusters in Silicon
p.585

Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si
p.591

In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere
p.597

The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors
p.603

Transition-Metal Luminescence in III-V Alloys
p.615

The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPR
p.621

Identification of the Co¹⁺ Double Acceptor State in GaAs
p.627

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12In Studies of the Electron-Irradiated Silicon...

In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

597-602

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.597

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Online since:

January 1986

Authors:

T.S. Shi, G.R. Bai, M.W. Qi, J. Zhou

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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