Paper Titles

Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si
p.591

In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere
p.597

The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors
p.603

Transition-Metal Luminescence in III-V Alloys
p.615

The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPR
p.621

Identification of the Co¹⁺ Double Acceptor State in GaAs
p.627

Spectroscopy of GaAs and InP Grown in the Presence of Rare Earth Elements
p.633

Vanadium in GaAs and GaP
p.639

Properties of Titanium in GaAs and InP
p.645

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12The Importance of Random Strain in Deep Level...

The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPR

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

621-626

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.621

Citation:

Cite this paper

Online since:

January 1986

Authors:

Colin A. Bates, Janette L. Dunn, J. Handley, A.F. Labadz, M. Darcha, M.En.- Naqadi, A.M. Vasson

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: